Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates.

Steven Albert (1) , Ana Bengoechea-Encabo (1) , Pierre Lefebvre (1, 2, 3) , M.A. Sanchez-Garcia (1) , E. Calleja (1) , Uwe Jahn (4) , A. Trampert (4)

1 ETSI Telecomunicacion - Departamento de Ingeniería Electrónica and ISOM
2 GES - Groupe d'étude des semiconducteurs
3 L2C - Laboratoire Charles Coulomb
4 PDI - Paul-Drude-Institut für Festkörperelektronik

This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650°C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emission.

Mots clés: gallium compounds; III-V semiconductors; indium compounds; molecular beam epitaxial growth; nanofabrication; nanostructured materials; photoluminescence; plasma materials processing; scanning electron microscopy; self-assembly; semiconductor growth; wide band gap semiconductors

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Steven Albert, Ana Bengoechea-Encabo, Pierre Lefebvre, M.A. Sanchez-Garcia, E. Calleja, et al.. Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates.. Applied Physics Letters, 2011, 99, pp.131108. ⟨10.1063/1.3644986⟩. ⟨hal-00631167⟩