Low temperature synthesis of -Al2O3 films by high-power plasma-assisted chemical vapour deposition

Kaiyun Jiang (1) , Kostas Sarakinos (1, 2) , Stephanos Konstantinidis (1, 3) , Jochen M Schneider (1)

1 Materials Chemistry [Aachen]
2 IFM - Department of Physics, Chemistry and Biology [Linköping]
3 UMons - Université de Mons

In this study, we deposit Al 2 O 3 films using plasma assisted chemical vapor deposition (PACVD) in an Ar-H 2 -O 2 -AlCl 3 atmosphere. A novel generator delivering approx. 4 times larger power densities than those conventionally employed in PACVD enabling efficient AlCl 3 dissociation in the gas phase, as well as a more intense energetic bombardment of the growing film is utilized. We demonstrate that these deposition conditions allow for the growth of dense ?-Al 2 O 3 films with negligible Cl incorporation and elastic properties similar to those of the bulk ?-Al 2 O 3 at a temperature of 560 ±10 °C.

Mots clés: Physical Sciences

Kaiyun Jiang, Kostas Sarakinos, Stephanos Konstantinidis, Jochen M Schneider. Low temperature synthesis of -Al2O3 films by high-power plasma-assisted chemical vapour deposition. Journal of Physics D: Applied Physics, 2010, 43 (32), pp.325202. ⟨10.1088/0022-3727/43/32/325202⟩. ⟨hal-00629973⟩