Broadening of intersubband and interband transitions in InGaN/AlInN multi-quantum wells

M Gladysiewicz (1) , R Kudrawiec (1) , J Misiewicz (1) , G Cywiński (2) , M Siekacz (2) , C Skierbiszewski (2)

1 Institute of Physics
2 IHPP - Institute of High Pressure Physics [Warsaw]

The authors have applied modulation spectroscopy to study intersubband (IS) and interband (IB) transitions in InGaN/AlInN multi quantum well (QW) structures with the QW width varying from 1.3 to 1.8 nm, and proposed a simple method to analyze the broadening of IS and IB transitions. Within this method the measured broadenings of IS and IB transitions have been compared with theoretical calculations performed within the effective mass approximation for a QW system with various QW width fluctuations. In the framework of this comparison it has been found that the QW width fluctuation in the investigated InGaN/AlInN QW system is close to 2 monolayers.

Mots clés: Physical Sciences

M Gladysiewicz, R Kudrawiec, J Misiewicz, G Cywiński, M Siekacz, et al.. Broadening of intersubband and interband transitions in InGaN/AlInN multi-quantum wells. Journal of Physics D: Applied Physics, 2010, 43 (19), pp.195101. ⟨10.1088/0022-3727/43/19/195101⟩. ⟨hal-00629949⟩