Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

Tang Xiaohui (1) , Nicolas Reckinger (1) , Vincent Bayot (1) , Christophe Krzeminski (2) , Emmanuel Dubois (2) , Alexandre Villaret (3) , Daniel Bensahel (3)

1 DICE - MLG - Dispositifs Intégrés et Circuits Electroniques Machine Learning Group
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 ST-CROLLES - STMicroelectronics [Crolles]

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application.

Mots clés: nanotechnology; single-electron memory; Coulomb blockade effect; self-aligned floating gate; arsenic-assisted etching and oxidation effects.; arsenic-assisted etching and oxidation effects

Domaines: Micro et nanotechnologies/Microélectronique

Tang Xiaohui, Nicolas Reckinger, Vincent Bayot, Christophe Krzeminski, Emmanuel Dubois, et al.. Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices. IEEE Transactions on Nanotechnology, 2006, 5 (6), p. 649. ⟨10.1109/TNANO.2006.883481⟩. ⟨hal-00623277⟩