Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength

Chang Hyun Kim (1) , Omid Yaghmazadeh (1) , Denis Tondelier (1) , Yong Bin Jeong (1) , Yvan Bonnassieux (1) , Gilles Horowitz (1)

1 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]

The capacitive behavior of pentacene films was investigated in the metal-semiconductor-metal (MSM) diode structure. Impedance analysis of diodes with a thick pentacene layer up to 1012 nm showed a full depletion of the organic layer. This observation allowed us to regard the MSM diode as a parallel-plate capacitor in the reverse-bias regime without current flow. Under forward-bias, the diode was evaluated through frequency-dependent impedance measurements by using an equivalent circuit composed of a single parallel resistance-capacitance circuit. The analysis of the data in both the reverse and forward bias regime led us to electrical methods for quantifying dielectric properties of pentacene.

Domaines: Electronique

Chang Hyun Kim, Omid Yaghmazadeh, Denis Tondelier, Yong Bin Jeong, Yvan Bonnassieux, et al.. Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength. Journal of Applied Physics, 2011, 109, pp.083710. ⟨hal-00605026⟩