Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device

Christophe Krzeminski (1) , Emmanuel Dubois (1) , Xiaohui Tang (2) , Nicolas Reckinger (2) , André Crahay (2) , Vincent Bayot (2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 DICE - MLG - Dispositifs Intégrés et Circuits Electroniques Machine Learning Group

Process simulation are performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated.

Mots clés: flash memories; non volatile memories; quantum dot; single-electron device; device scaling; scaling limits; silicon on insulator technology (SOI).; Process modeling; silicon on insulator technology (SOI)

Domaines: Micro et nanotechnologies/Microélectronique

Christophe Krzeminski, Emmanuel Dubois, Xiaohui Tang, Nicolas Reckinger, André Crahay, et al.. Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device. Materials Research Society Fall Meeting, Nov 2004, Boston, United States. pp.D1.6.1. ⟨hal-00603411⟩