Integrated Low Power and High Bandwidth Optical Isolator for Monolithic Power MOSFETs Driver

Nicolas Clément, Jean-Paul Rouger (1) , Jean-Christophe Crébier (1) , Olivier Lesaint (1)

1 G2ELab - Laboratoire de Génie Electrique de Grenoble

An integrated solution for the galvanic isolation between power transistors and their control unit is presented in this paper. This solution is based on a monolithic integration of a photodetector within a power MOSFET without any modification of its fabrication process. This photoreceiver can be associated with a monolithic driver to drive high side switches. Exhaustive characteristics for several integrated photodetectors are presented and discussed: quantum efficiency, step response, small signal analysis and sensitivity to the High Voltage MOSFET's Drain. The results of this analysis are photoreceivers with a Full Width at Half Maximum above 300MHz and a responsivity above 0.15A/W at a wavelength of 500nm. This leads to an integrated low power and high bandwidth optical isolation.

Domaines: Energie électrique

Nicolas Clément, Jean-Paul Rouger, Jean-Christophe Crébier, Olivier Lesaint. Integrated Low Power and High Bandwidth Optical Isolator for Monolithic Power MOSFETs Driver. Proceedings of 23rd International Symposium on Power Semiconductor Devices & IC's, May 2011, San Diego, United States. pp.356-359. ⟨hal-00599257⟩