Effect of Fe doping on the terahertz conductivity of GaN single crystals

Filip Kadlec (1) , Christelle Kadlec (1) , Tanya Paskova (2) , Keith Evans (2)

1 Institute of Physics
2 KYMATECH - Kyma Technologies Inc.

Bulk single crystals of GaN with different degree of Fe doping were studied using time-domain terahertz spectroscopy at high temperatures. Features due to free carriers were observed in the complex permittivity spectra with a pronounced dependence on both doping and temperature. Fitting the spectra using the Drude model made it possible to deduce the defect ionization energy of 16 meV in the undoped sample while the spectra of doped samples are consistent with an ionization energy of 60 meV. Also, the free carrier concentrations at temperatures from 300 K to 900 K were estimated.

Mots clés: Gallium nitride; terahertz spectroscopy; iron doping; self-heating PACS numbers: 78.30.Fs

Filip Kadlec, Christelle Kadlec, Tanya Paskova, Keith Evans. Effect of Fe doping on the terahertz conductivity of GaN single crystals. Journal of Physics D: Applied Physics, 2010, 43 (14), pp.145401. ⟨10.1088/0022-3727/43/14/145401⟩. ⟨hal-00597819⟩