Doping engineering to increase the material yield during crystallization of B and P compensated silicon

Maxime Forster (1, 2) , Erwann Fourmond (1) , Roland Einhaus (2) , Hubert Lauvray (2) , Jed Kraiem (2) , Mustapha Lemiti (1)

1 INL - PV - INL - Photovoltaïque
2 Apollon Solar - Apollon Solar

In this paper, we investigate gallium co-doping during crystallization of boron and phosphorus compensated Si. It is shown that the addition of gallium yields a fully p-type ingot with high resistivity despite high B and P contents in the silicon melt. Segregation of doping impurities is consistent with theory. Minority carrier lifetime and majority carrier mobility measurements indicate that this material is suitable for the realization of solar cells with comparable efficiencies to standard material. Significant light-induced degradation of minority carrier lifetime is however revealed to occur in this material as in standard boron-doped silicon.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Maxime Forster, Erwann Fourmond, Roland Einhaus, Hubert Lauvray, Jed Kraiem, et al.. Doping engineering to increase the material yield during crystallization of B and P compensated silicon. 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, Sep 2010, Valencia, Spain. pp.1250 - 1253, ⟨10.4229/25thEUPVSEC2010-2BO.3.2⟩. ⟨hal-00595328⟩