Yttria - stabilized zirconia thin films deposited by pulsed-laser deposition and magnetron sputtering

Hervé Hidalgo (1) , Ekaterina Rezugina (1) , Eric Millon (1) , Anne Lise Thomann (1) , Jacky Mathias (1) , Chantal Boulmer-Leborgne (1) , Thierry Sauvage (2) , Pascal Brault (1)

1 GREMI - Groupe de recherches sur l'énergétique des milieux ionisés
2 CEMHTI - Conditions Extrêmes et Matériaux : Haute Température et Irradiation

Yttria-stabilized zirconia (YSZ, ZrO2:Y2O3) was deposited on (100) silicon by two physical vapor deposition techniques: pulsed laser deposition (PLD) and reactive magnetron sputtering (RMS). PLD thin films were grown on silicon substrates at 500°C from the ablation of a 8YSZ ceramic target by a KrF excimer laser. RMS thin films were obtained by direct current magnetron sputtering of a Zr/Y metallic target in an oxygen/argon atmosphere. The deposition rate of the PLD technique using an UV excimer laser delivering pulses at a repetition rate of 40 Hz was found two orders of magnitude lower than the RMS method one. Both techniques led to the growth of crystalline films with a (111) preferential orientation. PLD films were dense and featureless whereas RMS ones exhibited well defined but compact columnar structure. Growth of a YSZ film of about 1 µm covering a rough and porous commercial anode support (NiO-YSZ cermet) was successfully carried out with both methods.

Mots clés: Solid oxide fuel cell; Yttria stabilized zirconia; Thin film growth; Pulsed laser deposition; Reactive magnetron sputtering; Porous substrate

Domaines: Plasmas

Hervé Hidalgo, Ekaterina Rezugina, Eric Millon, Anne Lise Thomann, Jacky Mathias, et al.. Yttria - stabilized zirconia thin films deposited by pulsed-laser deposition and magnetron sputtering. Surface and Coatings Technology, 2011, 205, pp.4495-4499. ⟨10.1016/j.surfcoat.2011.03.077⟩. ⟨hal-00593632⟩