Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

M F Romero (1) , M M Sanz (1) , I Tanarro (2) , * A Jiménez (3) , E Muñoz (1)

1 ISOM-Univ. Politécnica de Madrid ( UPM ). ETSIT
2 Inst. de Estructura de la Materia
3 Dpto. Electrónica

Spain *Corresponding author: [e-mail] Key words: High Electron Mobility Transistors (HEMT), AlGaN/GaN, silicon nitride (SiN) thin films, SiH 4- NH 3 plasmas, plasma diagnostics, plasma enhanced chemical vapour deposition (PECVD). Abstract In this work, silicon nitride thin films have been deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) on both silicon samples and AlGaN/GaN High Electron Mobility Transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH 4 and NH 3 precursors and the formation of H 2 and N 2 have been analysed by mass spectrometry as a function of the NH 3 /SiH 4 flow ratio and the RF power applied to the plasma reactor. Afterwards, the properties of the films and the HEMT electrical characteristics have been studied. Plasma composition has been correlated with the SiN deposition rate, refractive index, H content and the final electric characteristics of the passivated transistors.

Mots clés: Physical Sciences

M F Romero, M M Sanz, I Tanarro, * A Jiménez, E Muñoz. Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition. Journal of Physics D: Applied Physics, 2010, 43 (49), pp.495202. ⟨10.1088/0022-3727/43/49/495202⟩. ⟨hal-00576623⟩