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Article Dans Une Revue Journal of Physics D: Applied Physics Année : 2010

Modelling wafer bow in siliconpolycrystalline CVD diamond substrates for GaN-based devices

Résumé

Composite silicon–polycrystalline CVD diamond wafers are potential substrates for GaN-based devices for use in harsh environments due to their high thermal conductivity and chemical stability. When cooled from a typical diamond deposition temperature of approximately 800°C to 25°C wafer bowing arises from a mismatch in the coefficients of thermal expansion of silicon and polycrystalline diamond. In this paper 100mm diameter silicon–polycrystalline diamond wafers have been modelled using ANSYS finite element software to investigate their bowing behaviour as a function of temperature and geometry. The maximum bow of a wafer occurred where the thicknesses of both the silicon and polycrystalline diamond layers was almost identical ; this has been confirmed using analytical methods. Strategies are discussed for reducing wafer bow.
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Dates et versions

hal-00569715 , version 1 (25-02-2011)

Identifiants

Citer

M J Edwards, C R Bowen, D W E Allsopp, a C E Dent. Modelling wafer bow in siliconpolycrystalline CVD diamond substrates for GaN-based devices. Journal of Physics D: Applied Physics, 2010, 43 (38), pp.385502. ⟨10.1088/0022-3727/43/38/385502⟩. ⟨hal-00569715⟩

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