Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range

M de La Mare (1) , P J Carrington (1) , R Wheatley (1) , Q Zhuang (1) , R Beanland (2) , a M Sanchez (2) , A Krier (1)

1 Department of Physics [Lancaster]
2 Department of Physics

We report on the epitaxial growth and photoluminescence of InAs 0.926 Sb 0.063 N 0.011 /InAs multi-quantum wells grown using plasma-assisted molecular beam epitaxy. These dilute nitride quantum wells exhibit bright photoluminescence in the midinfrared spectral range up to a temperature of 250 K without any post-growth annealing. Consideration of the power dependent photoluminescence behaviour are consistent with a type I band line-up in these quantum wells, arising from a strong lowering of the conduction band edge due to N-induced band anti-crossing effects.

Mots clés: Physical Sciences

M de La Mare, P J Carrington, R Wheatley, Q Zhuang, R Beanland, et al.. Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range. Journal of Physics D: Applied Physics, 2010, 43 (34), pp.345103. ⟨10.1088/0022-3727/43/34/345103⟩. ⟨hal-00569683⟩