Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge

D Trunec (1) , L Zajková (1) , V Buršková (1) , F Studnika (1) , P S Ahel (1) , V Prysiazhnyi (1) , V Peřina (2) , J Houdková (3) , Z Navrátil (1) , D Franta (1)

1 SCI / MUNI - Faculty of Science [Brno]
2 Institute of Nuclear Physics
3 Institute of Physics

The atmospheric pressure dielectric barrier discharge burning in nitrogen with small admixture of hexamethyldisiloxane (HMDSO) was used for the deposition of thin organosilicon films. The thin films were deposited on glass, silicon and polycarbonate substrates, the substrate temperature during the deposition process was elevated up to values within the range 25 @BULLET C – 150 @BULLET C in order to obtain hard SiO x -like thin films. The properties of the discharge were studied by means of optical emission spectroscopy and electrical measurements. The deposited films were characterised by Rutherford backscattering and elastic recoil detection methods, x-ray photoelectron spectroscopy, infrared spectroscopy measurements, ellipsometry and depth sensing indentation technique. It was found that the films properties depend significantly on substrate temperature at deposition. An increase of substrate temperature from 25 @BULLET C to 150 @BULLET C leads to an increase of film hardness from 0.4 GPa to 7 GPa and the film chemical composition changes from CH x Si y O z to SiO x H y. The films were transparent in visible range.

Mots clés: Physical Sciences

D Trunec, L Zajková, V Buršková, F Studnika, P S Ahel, et al.. Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge. Journal of Physics D: Applied Physics, 2010, 43 (22), pp.225403. ⟨10.1088/0022-3727/43/22/225403⟩. ⟨hal-00569620⟩