The effects of incident electron current density and temperature on the total electron emission yield of polycrystalline CVD diamond

Mohamed Belhaj (1, 2) , T Tondu (1) , T , V Inguimbert (1) , Pierre Barroy (3) , François Silva (3) , Alix Gicquel (3)

1 ONERA - The French Aerospace Lab [Palaiseau]
2 STAE
3 LIMHP - Laboratoire d'Ingénierie des Matériaux et des Hautes Pressions

Effects of the temperature and the incident electron current density on the total electron emission yield (TEEY) of polycrystalline diamond deposited by chemical vapor deposition technique (CVD) were investigated at low electron beam fluence. It was found that the TEEY reversibly increases with the temperature and reversibly decreases with the current density. This behavior is explained on the basis of a dynamic completion between the holes accumulation which (positive space charge) that internally diminish the secondary electron (SE) emission and the thermally activated conductivity that tends to reduce the space charge formation.

Mots clés: Physical Sciences

Mohamed Belhaj, T Tondu, T , V Inguimbert, Pierre Barroy, et al.. The effects of incident electron current density and temperature on the total electron emission yield of polycrystalline CVD diamond. Journal of Physics D: Applied Physics, 2010, 43 (13), pp.135303. ⟨10.1088/0022-3727/43/13/135303⟩. ⟨hal-00569568⟩