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Communication Dans Un Congrès Année : 2011

Dry etching of single crystal PMN-PT piezoelectric material.

Résumé

During the last decade, the applications of PMN-PT spread significantly. Unlike PZT, the appropriate microtechnologies for PMN-PT Piezo-MEMS aren't fully documented in the literature. This paper deals with the PMN-PT etching by inductively coupled plasma (ICP) technique, also known as DRIE. The paper quantitatively presents the etching parameters of PMN-PT by the Ar/C4F8 gas combination and reports some related useful experience.
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Dates et versions

hal-00566569 , version 1 (16-02-2011)

Identifiants

  • HAL Id : hal-00566569 , version 1

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Joël Agnus, Ioan Alexandru Ivan, Samuel Queste. Dry etching of single crystal PMN-PT piezoelectric material.. 24th International Conference on Micro Electro Mechanical Systems, MEMS'11., Jan 2011, Cancun, Mexico. pp.237-240. ⟨hal-00566569⟩
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