Few Graphene layer/Carbon-Nanotube composite Grown at CMOS-compatible Temperature

V. Jousseaume (1) , J. Cuzzocrea (1) , N. Bernier (1) , Vincent Thomas Francois Renard (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

We investigate the growth of the recently demonstrated composite material composed of vertically aligned carbon nanotubes capped by few graphene layers. We show that the carbon nanotubes grow epitaxially under the few graphene layers. By using a catalyst and gaseous carbon precursor different from those used originally we establish that such unconventional growth mode is not specific to a precise choice of catalyst-precursor couple. Furthermore, the composite can be grown using catalyst and temperatures compatible with CMOS processing (T < 450 °C).

Mots clés: Graphene; carbon nanotubes; CMOS compatible growth

Domaines: Science des matériaux [cond-mat.mtrl-sci]

V. Jousseaume, J. Cuzzocrea, N. Bernier, Vincent Thomas Francois Renard. Few Graphene layer/Carbon-Nanotube composite Grown at CMOS-compatible Temperature. Applied Physics Letters, 2011, 98, pp.123103. ⟨10.1063/1.3569142⟩. ⟨hal-00558867⟩