%0 Journal Article
%T Laser emission with excitonic gain in a ZnO planar microcavity
%+ Laboratoire Charles Coulomb (L2C)
%+ Laboratoire des sciences et matériaux pour l'électronique et d'automatique (LASMEA)
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%+ Laboratoire de photonique et de nanostructures (LPN)
%A Guillet, Thierry
%A Brimont, Christelle
%A Valvin, Pierre
%A Gil, Bernard
%A Bretagnon, Thierry
%A Medard, F.
%A Mihailovic, Martine
%A Zúñiga-Pérez, Jesús
%A Leroux, Mathieu
%A Semond, F.
%A Bouchoule, Sophie
%< avec comité de lecture
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 98
%N 211105
%P 3
%8 2011-05-23
%D 2011
%Z 1106.0183
%R 10.1063/1.3593032
%K Zinc oxide
%K microcavity
%K strong coupling
%K VCSEL
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.
%G English
%2 https://hal.science/hal-00554480v3/document
%2 https://hal.science/hal-00554480v3/file/Guillet-ZnO_microcavity-arxiv2.pdf
%L hal-00554480
%U https://hal.science/hal-00554480
%~ UNICE
%~ PRES_CLERMONT
%~ CNRS
%~ UNIV-BPCLERMONT
%~ OPENAIRE
%~ L2C
%~ ACL-SF
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ ANR
%~ CRHEA
%~ UM-2015-2021