%0 Journal Article
%T Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C
%+ Groupe d'étude des semiconducteurs (GES)
%A Adell, M.
%A Ilver, L.
%A Kanski, J.
%A Stanciu, V.
%A Svedlindh, P.
%A Sadowski, J.
%A Domagala, Jz
%A Terki, Ferial
%A Hernandez, C.
%A Charar, Salam
%< avec comité de lecture
%Z GES:05-088
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 86
%P 112501
%8 2005
%D 2005
%Z cond-mat/0406584
%R 10.1063/1.1875746
%K CURIE-TEMPERATURE
%K GA1-XMNXAS
%K (GA
%K MN)AS
%K EPILAYERS
%K MN
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X In situ postgrowth annealing of (Ga,Mn)As layers under As capping is adequate for achieving high Curie temperatures (T-C) in a similar way as ex situ annealing in air or in N-2 atmosphere practiced earlier. Thus, the first efforts give an increase of T-C from 68 to 145 K after 2 h annealing at 180 degrees C. These data, in combination with lattice parameter determinations and photoemission results, show that the As capping acts as an efficient sink for diffusing Mn interstitials. (C) 2005 American Institute of Physics.
%G English
%L hal-00549879
%U https://hal.science/hal-00549879
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2