%0 Journal Article
%T METAL ORGANIC VAPOR-PHASE EPITAXY AND LUMINESCENCE STUDIES OF GAAS ZNSE DOUBLE HETEROSTRUCTURES
%+ Groupe d'étude des semiconducteurs (GES)
%A Briot, Olivier
%A Briot, N.
%A Cloitre, Thierry
%A Aulombard, Roger
%A Gil, Bernard
%A Mathieu, H.
%< avec comité de lecture
%J Semiconductor Science & Technology
%V 6
%N 7
%P 695
%8 1991
%D 1991
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X Recently, III-V/II-VI single and double heterostructures have attracted much attention for device applications. The first demonstration of metal organic vapour phase epitaxy (MOVPE) of a GaAs/ZnSe/GaAs double heterostructure is reported. The influence of the ZnSe layer on the top GaAs layer is discussed from photoluminescence and reflectivity results.
%G English
%L hal-00547297
%U https://hal.science/hal-00547297
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2