%0 Conference Proceedings
%T DEPTH PROFILING OF CARRIERS IN ZNSE/GAAS HETEROSTRUCTURES BY RAMAN-SPECTROSCOPY
%+ Groupe d'étude des semiconducteurs (GES)
%A Pagès, O.
%A Renucci, Ma
%A Briot, Olivier
%A Cloitre, Thierry
%A Aulombard, Roger
%< avec comité de lecture
%( JOURNAL OF CRYSTAL GROWTH
%B 5TH INTERNATIONAL CONF ON II-VI-COMPOUNDS ( II-VI-91 )
%C Tamano, Japan
%V 117
%N 4
%P 569
%8 1991
%D 1991
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Non-intentionally doped ZnSe epilayers grown on (100) semi-insulating GaAs substrates by the MOVPE technique constitute heterostructures exhibiting "apparent" p-type conductivity, which we have investigated by Raman spectroscopy. The Raman spectrum of the substrate gives evidence of the presence of a p-type carrier gas in GaAs with p ranging from 10(18) to 10(20) cm-3, which appears as confined at the interface of ZnSe/GaAs. We have shown that the indium dots used for Hall-effect measurements diffuse through the epilayer up to the interfacial gas and concluded that this one is responsible for the large p-type conductivity of the samples. Moreover a quantitative analysis gives access to the interfacial gas thickness, typically 1000 angstrom.
%G English
%L hal-00547295
%U https://hal.science/hal-00547295
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2