%0 Journal Article
%T OPTICAL-PROPERTIES OF WIDE-GAP II-VI ZNTE EPILAYERS
%+ Groupe d'étude des semiconducteurs (GES)
%A Averous, M.
%A Abounadi, A.
%A Aulombard, Roger
%A Bouchara, D.
%A Briot, N.
%A Briot, Olivier
%A Calas, J.
%A Cloitre, Thierry
%A Gil, Bernard
%< avec comité de lecture
%@ 0370-1972
%J physica status solidi (b)
%I Wiley
%V 181
%P 427
%8 1994
%D 1994
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X The optical properties of ZnTe epilayers grown by low-pressure metal organic vapour phase epitaxy on GaAs and GaSb substrates are studied. The layers are grown by using the halide-free triethylamine dimethylzinc adduct and di-isopropyl telluride as zinc and tellurium precursors, respectively. A detailed analysis of the residual strain is offered as a function of layer thickness and substrate nature via reflectivity measurements performed at pumped liquid helium temperature. This is completed by an extensive analysis of near-band-edge photoluminescence spectra in order to discriminate the contribution of residual impurities. Using these precursors ZnTe layers with extremely low contamination rates are obtained.
%G English
%L hal-00547284
%U https://hal.science/hal-00547284
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2