%0 Journal Article
%T OPTICAL CHARACTERIZATION OF PURE ZNSE EPILAYERS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
%+ Groupe d'étude des semiconducteurs (GES)
%A Chergui, A.
%A Valenta, J.
%A Loison, J.L.
%A Robino, M.
%A Pelant, I.
%A Grun, J.B.
%A Levy, R.
%A Briot, Olivier
%A Aulombard, Roger
%< avec comité de lecture
%J Semiconductor Science & Technology
%V 9
%N 11
%P 2073
%8 1994
%D 1994
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X Different ZnSe/GaAs epilayers prepared by low-pressure metal organic vapour-phase epitaxy under the conditions given by Nurmikko and Gunshor (1993 Physica B 185 16) are studied through their low-temperature transmission, reflection and photoluminescence spectra. Several samples are etched out from their GaAs substrate and the properties of as-grown surfaces and etched surfaces are compared. The etched samples seem to be free of in-plane strain and to behave like bulk ZnSe. The free-exciton excited state (n = 2) is clearly observed in transmission, reflection and luminescence spectra. We also studied the thermal quenching of the photoluminescence in order to confirm the origin of some bound-exciton centres.
%G English
%L hal-00547275
%U https://hal.science/hal-00547275
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2