%0 Journal Article
%T ELECTRONIC STATES AND BINDING-ENERGIES IN ZNS-ZNSE SUPERLATTICES
%+ Groupe d'étude des semiconducteurs (GES)
%A Gil, Bernard
%A Cloitre, Thierry
%A Diblasio, M.
%A Bigenwald, Pierre
%A Aigouy, L.
%A Briot, N.
%A Briot, Olivier
%A Bouchara, D.
%A Aulombard, Roger
%A Calas, J.
%< avec comité de lecture
%@ 1098-0121
%J Physical Review B: Condensed Matter and Materials Physics (1998-2015)
%I American Physical Society
%V 50
%N 24
%P 18231
%8 1994
%D 1994
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We present a detailed study of the optical properties of short-period ZnS-ZnSe strained-layer superlattices. These superlattices have been grown by metalorganic vapor-phase epitaxy. We show that the photoluminescence exhibits a low-energy tail due to localization of the exciton to interfacial potential fluctuations. A detailed analysis of the electronic structure has been performed using the envelope-function approach to obtain the valence-band and conduction-band envelope functions and band lineups. This was completed by a self-consistent calculation of the exciton binding energies. In this calculation the marginal conduction-band offset deduced from the standard envelope-function calculation is corrected by the electrostatic deformation produced by the presence of a localized hole wave function.
%G English
%L hal-00547272
%U https://hal.science/hal-00547272
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2