%0 Journal Article
%T CRITICAL LAYER THICKNESS IN METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN INGAAS/GAAS STRAINED QUANTUM-WELLS
%+ Groupe d'étude des semiconducteurs (GES)
%A Zhang, Xb
%A Briot, Olivier
%A Gil, Bernard
%A Aulombard, Roger
%< avec comité de lecture
%@ 0021-8979
%J Journal of Applied Physics
%I American Institute of Physics
%V 78
%N 9
%P 5490
%8 1995
%D 1995
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X A series of In0.14Ga0.86As/GaAs quantum well structures have been grown by metal organic chemical vapor deposition (MOCVD). The measured dependence of photoluminescence (PL) energies on well width is compared with calculation. By the energy shift, line width, and intensity change of PL spectroscopy, critical layer thickness has been identified. The critical layer thickness obtained for MOCVD-grown material was found in agreement with theoretical value, but is smaller than material grown by molecular beam epitaxy.
%G English
%L hal-00547266
%U https://hal.science/hal-00547266
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2