%0 Journal Article
%T OPTICAL-PROPERTIES AND RECOMBINATION PROCESSES IN (ZN,CD)SE GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURES
%+ Groupe d'étude des semiconducteurs (GES)
%A Aigouy, L.
%A Alexis, J.P.
%A Briot, Olivier
%A Cloitre, Thierry
%A Gil, Bernard
%A Aulombard, Roger
%A Averous, M.
%< avec comité de lecture
%@ 0749-6036
%J Superlattices and Microstructures
%I Elsevier
%V 17
%N 4
%P 381
%8 1995
%D 1995
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X Graded Index Separate Confinement Heterostructures have been grown by MOVPE using (Zn,Cd)Se and ZnSe wide bandgap semiconductors. These structures are composed of a deep Zn1-xCdxSe (x<0.23%) central well embedded between two thick (Zn, Cd)Se graded layers within which the cadmium composition varies from 0 up to 10% on one side of the well, and from 10 down to 0% on the other side. Both carriers and photon confinement occur in such structures making them suitable for blue-green stimulated emission. Reflectance and photoreflectance data, taken at 2K on a series of samples of different designs allowed us to observe excitonic transitions up to the third quantum number. The structures exhibit a strong photoluminescence line due to the recombination of the carriers in the quantum well. The photoluminescence intensity is analyzed as a function of the temperature and displays a strong thermal quenching. This quenching is due to an increase of the non-radiative recombinations through defects at low temperature and to the thermal escape of the carriers above 40-60K. The value of the activation energy for thermal escape shows that this mechanism is unipolar and concerns the heavy holes.
%G English
%L hal-00547265
%U https://hal.science/hal-00547265
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2