%0 Journal Article
%T Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry
%+ Groupe d'étude des semiconducteurs (GES)
%A Gil, Bernard
%A Briot, Olivier
%A Aulombard, Roger
%< avec comité de lecture
%@ 1098-0121
%J Physical Review B: Condensed Matter and Materials Physics (1998-2015)
%I American Physical Society
%V 52
%N 24
%P 17028
%8 1995
%D 1995
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We report on a quantitative analysis of the band gap of hexagonal GaN epilayers in terms of the joint contributions;of the actual wurtzite symmetry on the one hand and of residual strain fields on the other hand. This investigation leads to revision of the previous modelings based on quasicubic descriptions of the valence-band physics and gives Delta(1)=10+/-0.1 meV, Delta(2)=6.2+/-0.1 meV, and Delta(3)=5.5+/-0.1 meV. Last we propose a set of deformation potentials for the hexagonal GaN semiconductor.
%G English
%L hal-00547098
%U https://hal.science/hal-00547098
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2