%0 Conference Proceedings
%T MOVPE growth of zincblende magnesium sulphide
%+ Groupe d'étude des semiconducteurs (GES)
%A Konczewicz, Leszek
%A Bigenwald, Pierre
%A Cloitre, Thierry
%A Chibane, M.
%A Ricou, M.
%A Testud, P.
%A Briot, Olivier
%A Aulombard, Roger
%< avec comité de lecture
%( JOURNAL OF CRYSTAL GROWTH
%B 7th International Conference on II-VI Compounds and Devices
%C Edinburgh, United Kingdom
%V 159
%P 117
%8 1995
%D 1995
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X The successful growth of MgS epitaxial layers with the MOVPE technique is reported. The samples were grown on GaAs substrates in a classical horizontal reactor, using bis(methylcyclopentadienyl) magnesium and H2S as precursors. The zincblende structure of MgS layers is evidenced by careful X-ray diffraction analysis. The lattice constant is found to be about 5.66 Angstrom. The influence of the growth temperature on the morphology and quality of the layers is studied in detail.
%G English
%L hal-00547062
%U https://hal.science/hal-00547062
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2