%0 Journal Article
%T Coupled LO-plasmon modes in semi-insulating GaAs of ZnSe/GaAs heterojunctions
%+ Laboratoire Physique des Solides de Toulouse
%+ Groupe d'étude des semiconducteurs (GES)
%A Pagès, O.
%A Renucci, Ma
%A Briot, Olivier
%A Aulombard, Roger
%< avec comité de lecture
%@ 0021-8979
%J Journal of Applied Physics
%I American Institute of Physics
%V 80
%N 2
%P 1128
%8 1996
%D 1996
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X Raman spectroscopy is used to investigate strong band bending at the interface in semi-insulating substrates of ZnSe/GaAs heterostructures grown at high epitaxy rates. Direct evidence is given of the enhancement of polar modes strength, on the substrate side, by the electric field of the space-charge zone associated with Fermi-level pinning. The latter is qualitatively analyzed by following band flattening under illumination through the evolution of interfacial coupled LO-phonon-plasmon modes. Corresponding Raman line shapes are discussed within the phenomenological approach of D. H. Hon and W. L. Faust [Appl. Phys. 1, 241 1 (1973)].
%G English
%L hal-00547055
%U https://hal.science/hal-00547055
%~ UNIV-TLSE3
%~ LPST
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UNIV-UT3
%~ UT3-INP
%~ UT3-TOULOUSEINP
%~ UM1-UM2