%0 Journal Article
%T Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy
%+ Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (MBI)
%A Zeimer, U.
%A Bugge, F.
%A Gramlich, S.
%A Smirnitski, V.
%A Weyers, M.
%A Trankle, G.
%A Grenzer, J.
%A Pietsch, U.
%A Cassabois, Guillaume
%A Emiliani, V.
%A Lienau, C.
%< avec comité de lecture
%Z GES:01-009
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 79
%P 1611-1613
%8 2001
%D 2001
%R 10.1063/1.1402638
%K NM
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X A strain-induced lateral variation of the band edges of a 10-nm-thick In0.16Ga0.84As quantum well embedded in GaAs is achieved by patterning of a 100-nm-thick compressively strained In0.52Ga0.48P stressor layer. The strain modulation results in a splitting of the 10 K far-field photoluminescence (PL) spectra into two emission peaks. Spectrally resolved two-dimensional near-field PL images establish a clear spatial and spectral separation of the two far-field PL peaks, indicating a lateral carrier confinement with a confinement energy of about 10 meV. Finite-element calculations of the strain distribution are used to determine the lateral band-edge shifts and are well in agreement with the experimental findings. (C) 2001 American Institute of Physics.
%G English
%L hal-00546754
%U https://hal.science/hal-00546754