%0 Journal Article
%T Photoluminescence up-conversion in single self-assembled InAs/GaAs quantum dots
%+ Laboratoire Pierre Aigrain (LPA)
%+ Laboratoire de photonique et de nanostructures (LPN)
%A Kammerer, Claire
%A Cassabois, Guillaume
%A Voisin, C.
%A Delalande, C.
%A Roussignol, P.
%A Gerard, Jm
%< avec comité de lecture
%Z GES:01-007
%@ 0031-9007
%J Physical Review Letters
%I American Physical Society
%V 87
%P 207401
%8 2001
%D 2001
%R 10.1103/PhysRevLett.87.207401
%K ANTI-STOKES PHOTOLUMINESCENCE
%K ORGANIZED GROWTH
%K WELL STRUCTURES
%K HETEROJUNCTION
%K RELAXATION
%K GAAS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X Microphotoluminescence measurements under ew excitation reveal the existence of a strong photoluminescence up-conversion from single InAs/GaAs self-assembled quantum dots and also from the InAs wetting layer. Excitation spectroscopy of the up-converted photoluminescence signal shows identical features from the wetting layer and the single quantum dots, i.e., a band tail coming from the deep states localized at the rough interfaces of the wetting layer quantum well. This observation of photoluminescence up-conversion demonstrates the influence on the quantum dot properties of the environment, and highlights the limitations of the artificial atom model for a semiconductor quantum dot.
%G English
%L hal-00546746
%U https://hal.science/hal-00546746
%~ UNIV-PARIS7
%~ ENS-PARIS
%~ UPMC
%~ LPA
%~ CNRS
%~ PSL
%~ UPMC_POLE_2
%~ SORBONNE-UNIVERSITE
%~ SU-SCIENCES
%~ UNIV-PARIS
%~ ENS-PSL
%~ ALLIANCE-SU