%0 Journal Article
%T Disorder-induced photoluminescence up-conversion in InAs/GaAs quantum-dot samples
%+ Laboratoire Pierre Aigrain (LPA)
%+ Laboratoire de photonique et de nanostructures (LPN)
%A Cassabois, Guillaume
%A Kammerer, Claire
%A Sopracase, Rodolphe
%A Voisin, C.
%A Delalande, C.
%A Roussignol, P.
%A Gerard, Jm
%< avec comité de lecture
%Z GES:02-011
%@ 0021-8979
%J Journal of Applied Physics
%I American Institute of Physics
%V 91
%P 5489-5491
%8 2002
%D 2002
%R 10.1063/1.1459622
%K ANTI-STOKES PHOTOLUMINESCENCE
%K WELL STRUCTURES
%K GROWTH
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X Photoluminescence up-conversion under cw excitation in semiconductor quantum-dot structures is systematically studied in a sample exhibiting a crossover between two-dimensional and three-dimensional (3D) growth modes. We probe the existence of carrier up-conversion by using ultrathin quantum wells close to the quantum-dot layer. We show that the efficiency of the up-conversion is closely related to the disorder induced by the 3D-growth mode of the quantum dots. (C) 2002 American Institute of Physics.
%G English
%L hal-00546745
%U https://hal.science/hal-00546745
%~ UNIV-PARIS7
%~ ENS-PARIS
%~ UPMC
%~ LPA
%~ CNRS
%~ PSL
%~ UPMC_POLE_2
%~ SORBONNE-UNIVERSITE
%~ SU-SCIENCES
%~ UNIV-PARIS
%~ ENS-PSL
%~ ALLIANCE-SU