%0 Journal Article
%T Acoustic phonon sidebands in the emission line of single InAs/GaAs quantum dots
%+ Laboratoire Pierre Aigrain (LPA)
%+ Nanophysique et Semiconducteurs (NPSC)
%A Favero, I.
%A Cassabois, Guillaume
%A Ferreira, R.
%A Darson, D.
%A Voisin, C.
%A Tignon, J.
%A Delalande, C.
%A Bastard, Gérald
%A Roussignol, P.
%A Gerard, Jm
%< avec comité de lecture
%Z GES:03-026
%@ 1098-0121
%J Physical Review B: Condensed Matter and Materials Physics (1998-2015)
%I American Physical Society
%V 68
%P 233301
%8 2003
%D 2003
%R 10.1103/PhysRevB.68.233301
%K SEMICONDUCTORS
%K LINEWIDTHS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We present an experimental and theoretical study of the existence of acoustic phonon sidebands in the emission line of single self-assembled InAs/GaAs quantum dots. Temperature-dependent photoluminescence measurements reveal a deviation from a Lorentzian profile with the appearance of lateral sidebands. We obtain an excellent agreement with calculations done in the framework of the Huang-Rhys formalism. We conclude that the only relevant parameter for the observation of acoustic phonon sidebands is the linewidth of the central zero-phonon line. At high temperature, the quasi-Lorentzian quantum dot line appears to be fully determined by the acoustic phonon sidebands.
%G English
%L hal-00546643
%U https://hal.science/hal-00546643
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