%0 Journal Article
%T Stress effects on optical properties
%+ Groupe d'étude des semiconducteurs (GES)
%A Gil, Bernard
%< avec comité de lecture
%Z GES:99-034
%J GALLIUM NITRIDE (GAN) II
%V 57
%P 209-274
%8 1999
%D 1999
%K EFFECTIVE-MASS PARAMETERS
%K FIRST-PRINCIPLES CALCULATION
%K STRAINED WURTZITE GAN
%K GALLIUM NITRIDE
%K QUANTUM-WELLS
%K ELECTRONIC-STRUCTURE
%K TEMPERATURE-DEPENDENCE
%K DEFORMATION POTENTIALS
%K EXCITONIC TRANSITIONS
%K OSCILLATOR-STRENGTHS
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%G English
%L hal-00546567
%U https://hal.science/hal-00546567
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2