%0 Conference Proceedings
%T Polarized Photoluminescence From Nonpolar (11-20) (Ga,In)N Multi-Quantum-Wells
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%+ Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
%+ Groupe d'étude des semiconducteurs (GES)
%A Gühne, T.
%A Bougrioua, Z.
%A Nemoz, M.
%A Chmielowski, R.
%A Bretagnon, Thierry
%A Gil, Bernard
%A Leroux, M.
%< avec comité de lecture
%Z GES:09-103
%B PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors
%C Rio de Janeiro, Brazil
%V 1199
%P 191-192
%8 2008-07-27
%D 2008
%R 10.1063/1.3295362
%K Semiconducteurs
%K Semiconducteurs
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Conference papers
%X Nonpolar (11-20) (Ga,In)N multi-quantum wells have been studied by polarized, temperature dependent photoluminescence (PL). A non monotonic temperature dependence of the difference in PL peak energies recorded for E parallel to c or E perpendicular to c, and of the polarization ratio is observed. We interpret these effects by first an orthorhombic distortion of the crystal and an increased electron-hole exchange energy relative to GaN. This increase is in agreement with calculations on the effect of confinement on the exciton exchange splitting.
%G English
%L hal-00546363
%U https://hal.science/hal-00546363
%~ UNICE
%~ CNRS
%~ UNIV-VALENCIENNES
%~ UNIV-MONTP2
%~ IEMN
%~ GES
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ UNIV-LILLE
%~ CRHEA
%~ UM1-UM2