Polarized Photoluminescence From Nonpolar (11-20) (Ga,In)N Multi-Quantum-Wells

T. Gühne (1) , Z. Bougrioua (2) , M. Nemoz (1) , R. Chmielowski (1) , Thierry Bretagnon (3) , Bernard Gil (3) , M. Leroux (1)

1 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 GES - Groupe d'étude des semiconducteurs

Nonpolar (11-20) (Ga,In)N multi-quantum wells have been studied by polarized, temperature dependent photoluminescence (PL). A non monotonic temperature dependence of the difference in PL peak energies recorded for E parallel to c or E perpendicular to c, and of the polarization ratio is observed. We interpret these effects by first an orthorhombic distortion of the crystal and an increased electron-hole exchange energy relative to GaN. This increase is in agreement with calculations on the effect of confinement on the exciton exchange splitting.

Mots clés: Semiconducteurs; Semiconducteurs

Domaines: Autre [cond-mat.other]

T. Gühne, Z. Bougrioua, M. Nemoz, R. Chmielowski, Thierry Bretagnon, et al.. Polarized Photoluminescence From Nonpolar (11-20) (Ga,In)N Multi-Quantum-Wells. PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors, Jul 2008, Rio de Janeiro, Brazil. pp.191-192, ⟨10.1063/1.3295362⟩. ⟨hal-00546363⟩