%0 Conference Proceedings
%T Detection of terahertz radiation by AlGaN/GaN field-effect transistors
%+ Dipartimento di Scienze [Roma]
%+ Groupe d'étude des semiconducteurs (GES)
%A Ortolani, M.
%A Di Gaspare, A.
%A Giovine, E.
%A Evangelisti, F.
%A Foglietti, V.
%A Doria, A.
%A Gallerano, G.P.
%A Giovenale, E.
%A Messina, G.
%A Spassovsky, I.
%A Coppa, A.
%A Lanzieri, C.
%A Peroni, M.
%A Cetronio, A.
%A Sakowicz, M.
%A Knap, W.
%< avec comité de lecture
%B 34th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2009)
%C Busan, South Korea
%V 1 & 2
%P 315
%8 2009-09-21
%D 2009
%Z 978-1-4244-5416-7
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X High electron mobility transistors can work as room-temperature direct detectors of radiation at frequency much higher than their cutoff frequency. One open issue is how the radiation couples to the sub-wavelength transistor channel. Here, we studied the coupling of radiation to an AlGaN/GaN transistor with cut-off frequency of 30 GEL Local irradiation with a Free Electron Laser source at 0.15 THz allowed us to selectively couple the signal to the channel through one transistor terminal at a time. Far-field experiments at 0.15 - 0.94 THz were also performed in order to study the nonlinear properties of the transistor channel.
%G English
%L hal-00546345
%U https://hal.science/hal-00546345
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2