%0 Journal Article
%T Plasmon-induced Purcell effect in InN/In metal-semiconductor nanocomposites
%+ Groupe d'étude des semiconducteurs (GES)
%A Shubina, T. V.
%A Toropov, A. A.
%A Jmerik, V. N.
%A Kuritsyn, D. I.
%A Gavrilenko, L. V.
%A Krasil'Nik, Z. F.
%A Araki, T.
%A Nanishi, Y.
%A Gil, Bernard
%A Govorov, A. O.
%A Ivanov, S. V.
%< avec comité de lecture
%Z GES:10-043
%@ 1098-0121
%J Physical Review B: Condensed Matter and Materials Physics (1998-2015)
%I American Physical Society
%V 82
%P 073304
%8 2010
%D 2010
%R 10.1103/PhysRevB.82.073304
%K OPTICAL-PROPERTIES
%K PARTICLES
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X The Purcell effect, acceleration of a spontaneous emission recombination rate, has been observed in InN/In nanocomposites with buried nanoparticles of metallic In. This effect, associated with localized plasmons, is characterized by the averaged Purcell factor as high as 30-40 in the structures with large enough particles. This high value is indicative of a noticeable contribution from the emitting dipoles polarized normally to the nanoparticle surface in this system. The experimental observation of shortening of the emission lifetimes with increasing the amount of In is supported by calculations performed in a semiclassical approximation.
%G English
%L hal-00546318
%U https://hal.science/hal-00546318
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2