%0 Journal Article
%T Internal structure and oscillator strengths of excitons in strained alpha-GaN
%+ Groupe d'étude des semiconducteurs (GES)
%A Gil, Bernard
%A Briot, Olivier
%< avec comité de lecture
%Z GES:97-021
%@ 1098-0121
%J Physical Review B: Condensed Matter and Materials Physics (1998-2015)
%I American Physical Society
%V 55
%P 2530-2534
%8 1997
%D 1997
%K CONDUCTION
%K FILMS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We calculate the excitonic exchange interaction in alpha-GaN, and find it to be about 2 meV. A theoretical modelling of excitons is performed, and the oscillator strengths of radiative levels are calculated as a function of strain for (0001)-grown epilayers. In particular, we find that the strength of optical transitions are extremely sensitive to the residual strain field in view of the small value of the spin-orbit interaction. Our calculation shows agreement with low-temperature reflectance investigations in GaN epilayers grown on sapphire substrates.
%G English
%L hal-00546211
%U https://hal.science/hal-00546211
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2