%0 Conference Proceedings
%T MOVPE growth and optical properties of GaN deposited on c-plane sapphire
%+ Groupe d'étude des semiconducteurs (GES)
%A Briot, Olivier
%A Gil, Bernard
%A Tchounkeu, M.
%A Aulombard, Roger
%A Demangeot, François
%A Frandon, J.
%A Renucci, M.
%< avec comité de lecture
%Z GES:97-019
%( JOURNAL OF ELECTRONIC MATERIALS
%B 38th Electronic Materials Conference (EMC)
%C SANTA BARBARA (CA), United States
%V 26
%P 294-300
%8 1996-06-26
%D 1996
%K GaN
%K growth
%K metalorganic vapor phase epitaxy (MOVPE)
%K Raman spectroscopy
%K WURTZITE GAN
%K PRESSURE
%K PHOTOLUMINESCENCE
%K CRYSTAL
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We address combined utilization of temperature dependent reflectance, photoluminescence, and Raman spectroscopy measurements to optimize the structural and electronic properties of GaN epilayers deposited on sapphire. Last, we study residual strain fields in such epilayers.
%G English
%L hal-00546209
%U https://hal.science/hal-00546209
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2