%0 Journal Article
%T Zeeman splittings of excitonic transitions at the Gamma point in wurtzite GaN: A magnetoreflectance investigation
%+ Groupe d'étude des semiconducteurs (GES)
%A Campo, J.
%A Julier, M.
%A Coquillat, Dominique
%A Lascaray, Jean-Paul
%A Scalbert, Denis
%A Briot, Olivier
%< avec comité de lecture
%Z GES:97-011
%@ 1098-0121
%J Physical Review B: Condensed Matter and Materials Physics (1998-2015)
%I American Physical Society
%V 56
%P R7108-R7111
%8 1997
%D 1997
%K SEMIMAGNETIC SEMICONDUCTORS
%K EXCHANGE INTERACTION
%K EPILAYERS
%K GAAS
%K INP
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X Wurtzite GaN on (0001) sapphire is studied by means of reflectance and magnetocircular dichroism up to 5.5 T at 2 K. This very powerful technique allows us to determine the Zeeman splittings to be about 0.05 meV/T for the X-A and X-C excitons and almost zero for the X-B exciton. Reflectance and dichroism are interpreted with a model of Gaussian dispersion of the excitonic energies and are in excellent agreement with previously proposed band-edge models.
%G English
%L hal-00546200
%U https://hal.science/hal-00546200
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2