%0 Journal Article
%T Fabrication and photoluminescence of GaN sapphire submicron-scale structures with nanometre scale resolution
%+ Groupe d'étude des semiconducteurs (GES)
%A Ribayrol, A.
%A Coquillat, Dominique
%A de La Rue, Rm
%A Murad, Sk
%A Wilkinson, Cdw
%A Girard, Pascal
%A Briot, Olivier
%A Aulombard, Roger
%< avec comité de lecture
%Z GES:99-012
%@ 0921-5107
%J Materials Science and Engineering: B
%I Elsevier
%V 59
%P 335-339
%8 1999
%D 1999
%K GaN
%K reactive ion etching
%K CH4/H-2
%K microstructures
%K atomic force microscopy
%K photoluminescence
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We report the fabrication of submicon-scale structures using high resolution etching to transfer patterns from PMMA into GaN with an intermediate mask consisting of a bilayer of titanium and SiNx. Atomic force microscopy measurements showed the high quality of the structures etched in CH4/H-2 as well as an erosion of the mask. The low temperature photoluminescence measured on the etched structures was almost as strong as that from the unetched surface. (C) 1999 Elsevier Science S.A. All rights reserved.
%G English
%L hal-00546198
%U https://hal.science/hal-00546198
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2