%0 Conference Proceedings
%T Deep ultraviolet Raman scattering for the monitoring of high-temperature processing of AlGaN
%+ Groupe d'étude des semiconducteurs (GES)
%A Kuball, M.
%A Demangeot, François
%A Frandon, J.
%A Renucci, Ma
%A Batchelder, Dn
%A Briot, Olivier
%< avec comité de lecture
%Z GES:99-011
%( PHYSICA STATUS SOLIDI B-BASIC RESEARCH
%B International Conference on Solid State Spectroscopy - (ICSSS)
%C SCHWABISCH-GMUND (GERMANY), Germany
%V 215
%P 105-108
%8 1999-09-05
%D 1999
%K GAN
%K NITRIDE
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Deep ultraviolet micro-Raman scattering was employed to monitor high-temperature processing of AlGaN films under resonant excitation conditions, giving rise to enhanced first and second-order Raman scattering. High-temperature treatments at 1100 degrees C result in changes in the second-order Raman scattering signal and monitor the emergence of microscopic defects during the high-temperature processing. The second-order Raman spectrum was analyzed to gain insight into the AlGaN phonon density of states. For annealing temperatures higher than 1150 degrees C, the Al0.72Ga0.28N film decomposes: a low- and a high-aluminum composition AlxGa1-xN phase emerge. At 1100 degrees C, prior to the Al0.72Ga0.28N decomposition, deep UV Raman scattering detects the built-up of strain in the Al0.72Ga0.28N film.
%G English
%L hal-00546197
%U https://hal.science/hal-00546197
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2