%0 Journal Article
%T Thermal stability of GaN investigated by Raman scattering
%+ Groupe d'étude des semiconducteurs (GES)
%A Kuball, M.
%A Demangeot, François
%A Frandon, J.
%A Renucci, Ma
%A Massies, J.
%A Grandjean, N.
%A Aulombard, Roger
%A Briot, Olivier
%< avec comité de lecture
%Z GES:98-008
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 73
%P 960-962
%8 1998
%D 1998
%K FILMS
%K LAYERS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We have investigated the thermal stability of GaN using Raman scattering. Noninvasive optical monitoring of structural damage to GaN by high-temperature anneals in nitrogen ambient has been demonstrated. Characteristic features in the Raman spectrum identify three thermal stability regimes. Thermal damage between 900 and 1000 degrees C results in the appearance of a broad Raman peak between the E-2 and A(1) (LO) phonon. For anneals at temperatures higher than 1000 degrees C emerging macroscopic disorder gives rise to distinct Raman modes at 630, 656, and 770 cm(-1). Below 900 degrees C no thermal damage has been observed. The evolution of the Raman spectrum of GaN with increasing annealing temperature is discussed in terms of disorder-induced Raman scattering. We find clear indications for a reaction at the GaN/sapphire interface for anneals higher than 1000 degrees C. (C) 1998 American Institute of Physics.
%G English
%L hal-00546184
%U https://hal.science/hal-00546184
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2