%0 Conference Proceedings
%T Photonic crystal properties of GaN infilled artificial opals
%+ Groupe d'étude des semiconducteurs (GES)
%A Coquillat, Dominique
%A Legros, Rene
%A Etienne-Calas, Sylvie
%A Phalippou, J.
%A Moret, Matthieu
%A Briot, Olivier
%A Manzanares-Martinez, J.
%A Cassagne, David
%A Jouanin, C.
%< avec comité de lecture
%Z GES:01-006
%( PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II
%B 25th International Conference on the Physics of Semiconductors (ICPS25)
%C OSAKA (JAPAN), Japan
%I SPRINGER-VERLAG NEW YORK, MS INGRID CUNNINGHAM, 175 FIFTH AVE, NEW YORK, NY 10010 USA
%V 87
%P 1741-1742
%8 2000-09-17
%D 2000
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X We report the successful infilling of opal which consists of a fee arrangement of silica spheres with the semiconductor GaN by MOCVD technique. The angular dispersion of the Bragg diffracted light was studied for bare opal and GaN infilled opal by measuring reflection spectra at different external angles with respect to the [1 1 1] direction. The Bragg's law gives an estimation of 4.5% of void volume filled by the GaN. The crystal inhibits the yellow emission of GaN in the energies of the photonic gap. This decrease in the PL signal has one strong sensibility to the collection angle variation. This dependence is a signature of the GaN inside the opal voids.
%G English
%L hal-00546180
%U https://hal.science/hal-00546180
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2
%~ TEST3-HALCNRS