%0 Conference Proceedings
%T Terahertz detection in a double-grating-gate heterotransistor
%+ Groupe d'étude des semiconducteurs (GES)
%A Coquillat, D.
%A Nadar, S.
%A Teppe, F.
%A Dyakonova, N.
%A Boubanga-Tombet, S.
%A Knap, W.
%A Nishimura, T.
%A Meziani, Y. M.
%A Otsuji, T.
%A Popov, V. V.
%A Tsymbalov, G. M.
%< avec comité de lecture
%( Journal of Physics Conference Series
%B 16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16)
%C France
%V 193
%P 2074
%8 2009-08-24
%D 2009
%Z 2009JPhCS.193a2074C
%R 10.1088/1742-6596/193/1/012074
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X We observed a photovoltaic non-resonant terahertz photoresponse in a InGaAs/GaAs heterostructure with a large area double-grating-gate at room temperature. Semi-quantitative estimation of the characteristic detection length combined with self-consistent calculations of the electric fields exited in the structure by incoming terahertz radiation allowed us to interpret this detection as coming from the depleted regions of the channel.
%G English
%L hal-00545987
%U https://hal.science/hal-00545987
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2