%0 Journal Article
%T Competitive adsorption effects in the metalorganic vapor phase epitaxy of GaN
%+ Groupe d'étude des semiconducteurs (GES)
%A Briot, Olivier
%A Ruffenach, Sandra
%A Aulombard, Roger
%< avec comité de lecture
%Z GES:97-004
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 71
%P 1990-1992
%8 1997
%D 1997
%K PARASITIC REACTIONS
%K BUFFER LAYER
%K AMMONIA
%K GROWTH
%K DEPOSITION
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X The growth mechanisms of GaN grown on a GaN buffer deposited onto sapphire substrates are studied here. The growth rate was measured at different temperatures versus ammonia Row and was found to decrease with increasing NH3 flow. This surprising behavior is modeled in terms of competitive adsorption of species on the growing surface. Very good agreement is obtained between the model and the experimental data. (C) 1997 American Institute of Physics.
%G English
%L hal-00545876
%U https://hal.science/hal-00545876
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2