%0 Journal Article
%T The exciton-polariton effect on the photoluminescence of GaN on sapphire
%+ Groupe d'étude des semiconducteurs (GES)
%A Gil, Bernard
%A Ruffenach, Sandra
%A Briot, Olivier
%< avec comité de lecture
%Z GES:97-003
%@ 0038-1098
%J Solid State Communications
%I Elsevier
%V 104
%P 267-270
%8 1997
%D 1997
%K STRUCTURE LASER-DIODES
%K OPTICAL-PROPERTIES
%K EPILAYERS
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We report on the observation of free exciton photoluminescence associated with low and upper-polariton branch in GaN on sapphire. This is observed for both A and B lines. (C) 1997 Published by Elsevier Science Ltd.
%G English
%L hal-00545875
%U https://hal.science/hal-00545875
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2