%0 Journal Article
%T Degradation of AlGaN during high-temperature annealing monitored by ultraviolet Raman scattering
%+ Groupe d'étude des semiconducteurs (GES)
%A Kuball, M.
%A Demangeot, François
%A Frandon, J.
%A Renucci, Ma
%A Sands, H.
%A Batchelder, Dn
%A Ruffenach, Sandra
%A Briot, Olivier
%< avec comité de lecture
%Z GES:99-008
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 74
%P 549-551
%8 1999
%D 1999
%K GAN
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X We have illustrated the use of ultraviolet (UV) Raman scattering to investigate the thermal stability of AlGaN layers with high-aluminum content. The degradation pathway of Al0.72Ga0.28N was monitored for high-temperature treatments up to 1200 degrees C. For annealing temperatures higher than 1150 degrees C, the Al0.72Ga0.28N film decomposes: a low- and a high-aluminum composition AlxGa1-xN phase emerge. At 1100 degrees C, prior to the Al0.72Ga0.28N decomposition, UV Raman scattering detects the buildup of a large strain in the Al0.72Ga0.28N film The crystalline quality of Al0.72Ga0.28N is unaffected up to 1000 degrees C. (C) 1999 American Institute of Physics. [S0003-6951(99)00704-4].
%G English
%L hal-00545869
%U https://hal.science/hal-00545869
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2