%0 Journal Article
%T Field effect transistors for terahertz detection - silicon versus III-V material issue
%+ Groupe d'étude des semiconducteurs (GES)
%+ Institute of Experimental Physics [Warsaw] (IFD)
%A Knap, W.
%A Videlier, H.
%A Nadar, S.
%A Coquillat, D.
%A Dyakonova, N.
%A Teppe, F.
%A Bialek, M.
%A Grynberg, M.
%A Karpierz, K.
%A Lusakowski, J.
%A Nogajewski, K.
%A Seliuta, D.
%A Kašalynas, I.
%A Valušis, G.
%< avec comité de lecture
%@ 1230-3402
%J Opto-Electronics Review
%I Springer Verlag
%V 18
%P 225-230
%8 2010-09
%D 2010
%Z 2010OERv...18..225K
%R 10.2478/S11772-010-1018-7
%K THz detection
%K imaging
%K field-effect transistors
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Journal articles
%X Resonant frequencies of the two-dimensional plasma in FETs reach the THz range for nanometer transistor channels. Non-linear properties of the electron plasma are responsible for detection of THz radiation with FETs. Resonant excitation of plasma waves with sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature, plasma oscillations are usually over-damped, but the FETs can still operate as efficient broadband THz detectors. The paper presents the main theoretical and experimental results on detection with FETs stressing their possible THz imaging applications. We discuss advantages and disadvantages of application of III-V GaAs and GaN HEMTs and silicon MOSFETs.
%G English
%L hal-00545634
%U https://hal.science/hal-00545634
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ UNIV-MONTPELLIER
%~ UM1-UM2